发明授权
US6160113A Process and compositions for nitration of n-nitric acid at elevated
temperatures to form HNIW and recovery of gamma HNIW with high yields
and purities and crystallizations to recover epsilon HNIW crystals
失效
在高温下硝化硝酸的方法和组合物以形成HNIW并以高产率和纯度和结晶回收γHNIW以回收εHNIW晶体
- 专利标题： Process and compositions for nitration of n-nitric acid at elevated temperatures to form HNIW and recovery of gamma HNIW with high yields and purities and crystallizations to recover epsilon HNIW crystals
- 专利标题（中）： 在高温下硝化硝酸的方法和组合物以形成HNIW并以高产率和纯度和结晶回收γHNIW以回收εHNIW晶体
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申请号： US300988申请日： 1999-04-28
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公开(公告)号： US6160113A公开(公告)日： 2000-12-12
- 发明人: Raja Duddu , Paritosh R. Dave
- 申请人： Raja Duddu , Paritosh R. Dave
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Army
- 当前专利权人： The United States of America as represented by the Secretary of the Army
- 当前专利权人地址： DC Washington
- 主分类号： C06B25/34
- IPC分类号： C06B25/34 ; C07D487/02 ; C07D255/04
摘要：
Processes and compositions for nitration of N-substituted isowurtzitane compounds with concentrated nitric acid at elevated temperatures to form HNIW and recovery thereof with high yields and purities. Polymorphic conversions to the epsilon HNIW crystal form at quanititative yields are also described.
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