A semiconductor wafer processor includes a chamber having a wafer support. A magnetic field generator is configured to generate a magnetic field within the chamber at a location proximate a surface of a wafer received by the wafer support. The magnetic field generator comprises a plurality of conductors within the chamber proximate the support which radiate outwardly from a substantially common origin to a periphery. The origin and periphery can be in the same or multiple planes. In one embodiment, the magnetic field generator includes a first plurality of conductors radiating outwardly from a first origin to a first periphery, and a second plurality of conductors annularly radiating outwardly from an annular second origin to an annular second periphery. The first periphery is received at least partially within the second annular periphery. The generator can be utilized apart from a semiconductor wafer processor, such as for example in an electric motor or plasma generating apparatus.