发明授权
- 专利标题： Integrated deposition process for copper metallization
- 专利标题（中）： 铜金属化的集成沉积工艺
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申请号： US09204323申请日： 1998-12-02
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公开(公告)号： US06174811B1公开(公告)日： 2001-01-16
- 发明人: Peijun Ding , Imran Hashim , Barry Chin , Bingxi Sun
- 申请人： Peijun Ding , Imran Hashim , Barry Chin , Bingxi Sun
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
Metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.