发明授权
- 专利标题： Sputtering method and apparatus
- 专利标题（中）： 溅射方法和装置
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申请号： US09471509申请日： 1999-12-23
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公开(公告)号： US06176980B1公开(公告)日： 2001-01-23
- 发明人: Isamu Aokura , Teiichi Kimura , Hiroshi Hayata , Masahiro Yamamoto , Nobuyuki Mori
- 申请人： Isamu Aokura , Teiichi Kimura , Hiroshi Hayata , Masahiro Yamamoto , Nobuyuki Mori
- 优先权： JP10-371931 19981228
- 主分类号： C23C1434
- IPC分类号： C23C1434
摘要：
The film thickness of a thin film formed on substrate 14 is made symmetrical and uniform by eliminating currents of gas over target 9 by performing film deposition in a condition with gas supply and vacuum evacuation cut off, after adjusting the interior of vacuum chamber 1 to the predetermined pressure.