A method is provided for fabricating a self-aligned edge implanted split-gate flash memory comprising a semiconductor substrate of a first conductivity type having separated first and second regions of a second conductivity type formed therein, the first and second regions defining a substrate channel region therebetween; a floating gate separated from a doped region in the substrate by an oxide layer; a control gate partially overlying and separated by an insulator from said floating gate; said floating gate having thin portions and thick portions; and said thin portions of said floating gate overlying twice doped regions in said semiconductor substrate to reduce surface leakage current and improve program speed of the memory cell.