发明授权
US06180989B2 Selectively doped electrostatic discharge layer for an integrated circuit sensor 有权
用于集成电路传感器的选择性掺杂静电放电层

  • 专利标题: Selectively doped electrostatic discharge layer for an integrated circuit sensor
  • 专利标题(中): 用于集成电路传感器的选择性掺杂静电放电层
  • 申请号: US09144182
    申请日: 1998-08-31
  • 公开(公告)号: US06180989B2
    公开(公告)日: 2001-01-30
  • 发明人: Frank R. BryantDanielle A. Thomas
  • 申请人: Frank R. BryantDanielle A. Thomas
  • 主分类号: H01L2982
  • IPC分类号: H01L2982
Selectively doped electrostatic discharge layer for an integrated circuit sensor
摘要:
A structure and method for creating an integrated circuit passivation structure comprising, a circuit, a dielectric, and metal plates over which an insulating layer is disposed that electrically isolates the circuit, and a discharge layer that is deposited to form the passivation structure that protects the circuit from electrostatic discharges caused by, e.g., a finger, is disclosed. The discharge layer additionally contains dopants selectively deposited to increase electrostatic discharge carrying capacity while maintaining overall sensing resolution.
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