发明授权
US06184064B2 Semiconductor die back side surface and method of fabrication 有权
半导体模具背面及其制造方法

  • 专利标题: Semiconductor die back side surface and method of fabrication
  • 专利标题(中): 半导体模具背面及其制造方法
  • 申请号: US09481947
    申请日: 2000-01-12
  • 公开(公告)号: US06184064B2
    公开(公告)日: 2001-02-06
  • 发明人: Tongbi JiangChad A. Cobbley
  • 申请人: Tongbi JiangChad A. Cobbley
  • 主分类号: H01L2144
  • IPC分类号: H01L2144
Semiconductor die back side surface and method of fabrication
摘要:
A method of physically altering the backside surface of a semiconductor wafer or other substrate, and resulting article, to improve adhesion between the backside surface of semiconductor dice singulated from the wafer and a die attach adhesive or encapsulation compound. The physically altered backside surface reduces or substantially eliminates delamination and cracking damage in a semiconductor die assembly due to semiconductor wafer tape contamination and subsequent moisture penetration. The physically altered backside surface further reduces both semiconductor wafer tape contamination and shear stress along the interface between the semiconductor die backside surface and the die attach adhesive or encapsulation compound.
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