A method is provided for forming seed layers in semiconductor channel and via openings by using a two-stage approach after lining the channel and via openings with barrier material. First, a low temperature deposition of a seed layer is performed at below the 250° C. at which conductive material agglomeration occurs. Second, a higher temperature deposition of a seed layer is performed at above 250° C. Then, the conductive material is deposited to fill the channel and via openings.