发明授权
- 专利标题: High temperature, high flow rate chemical vapor deposition apparatus and related methods
- 专利标题(中): 高温,高流量化学气相沉积装置及相关方法
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申请号: US08799415申请日: 1997-02-12
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公开(公告)号: US06189482B1公开(公告)日: 2001-02-20
- 发明人: Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
- 申请人: Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
- 主分类号: C23C1600
- IPC分类号: C23C1600
摘要:
The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.