发明授权
US06191028B1 Method of patterning dielectric 失效
电介质图案方法

  • 专利标题: Method of patterning dielectric
  • 专利标题(中): 电介质图案方法
  • 申请号: US09059751
    申请日: 1998-04-14
  • 公开(公告)号: US06191028B1
    公开(公告)日: 2001-02-20
  • 发明人: Yimin HuangTri-Rung Yew
  • 申请人: Yimin HuangTri-Rung Yew
  • 优先权: TW86118145 19971203
  • 主分类号: H01L214763
  • IPC分类号: H01L214763
Method of patterning dielectric
摘要:
A method of patterning a dielectric layer. On a substrate having a metal wiring layer formed thereon, a dielectric layer and a masking layer are formed. A cap insulation layer is formed on the masking layer before patterning the dielectric layer. In addition, a dual damasecence process is used for patterning the dielectric layer.
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