发明授权
- 专利标题: Method of patterning dielectric
- 专利标题(中): 电介质图案方法
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申请号: US09059751申请日: 1998-04-14
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公开(公告)号: US06191028B1公开(公告)日: 2001-02-20
- 发明人: Yimin Huang , Tri-Rung Yew
- 申请人: Yimin Huang , Tri-Rung Yew
- 优先权: TW86118145 19971203
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
A method of patterning a dielectric layer. On a substrate having a metal wiring layer formed thereon, a dielectric layer and a masking layer are formed. A cap insulation layer is formed on the masking layer before patterning the dielectric layer. In addition, a dual damasecence process is used for patterning the dielectric layer.
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