发明授权
US06197632B1 Method for dual sidewall oxidation in high density, high performance DRAMS
失效
高密度,高性能DRAMS双壁氧化方法
- 专利标题: Method for dual sidewall oxidation in high density, high performance DRAMS
- 专利标题(中): 高密度,高性能DRAMS双壁氧化方法
-
申请号: US09440776申请日: 1999-11-16
-
公开(公告)号: US06197632B1公开(公告)日: 2001-03-06
- 发明人: Gary B. Bronner , Rama Divakaruni , Scott Halle , Dale W. Martin , Rajesh Rengarajan , Mary E. Weybright
- 申请人: Gary B. Bronner , Rama Divakaruni , Scott Halle , Dale W. Martin , Rajesh Rengarajan , Mary E. Weybright
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
This invention relates to integrated circuit product and processes. More particularly, the invention relates to high performance Dynamic Random Access Memory (DRAM) chips and processes for making such chips. An IC fabrication is provided, according to an aspect of the invention, including a silicon wafer, a DRAM array fabrication disposed on said silicon wafer having a first multitude of gate sidewall oxides, and a logic support device fabrication disposed on said wafer adjacent said DRAM array fabrication and having a second multitude of gate sidewall oxides, said first multitude of gate sidewall oxides being substantially thicker than said second multitude of gate sidewall oxides. Methods of making IC fabrications according to the invention are also provided.