A plasma apparatus for fabricating a semiconductor device, is provided. This plasma apparatus includes a grounded chamber for providing a space where a predetermined process is to be performed, a chuck mounted within the chamber and insulated from the chamber, a gas injection ring installed around the sidewall of the chuck, an induction plasma power source connected to the chuck, a system controller for controlling the induction plasma power source, and a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value. The gas injection ring is separated from the chuck by a predetermined distance and is electrically connected to the chamber.