发明授权
- 专利标题： Atomic layer deposition with nitrate containing precursors
- 专利标题（中）： 原子层沉积与含硝酸盐前体
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申请号： US09421096申请日： 1999-10-19
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公开(公告)号： US06203613B1公开(公告)日： 2001-03-20
- 发明人: Stephen McConnell Gates , Deborah Ann Neumayer
- 申请人： Stephen McConnell Gates , Deborah Ann Neumayer
- 主分类号： C30B2514
- IPC分类号： C30B2514
摘要：
Metal nitrate-containing precursor compounds are employed in atomic layer deposition processes to form metal-containing films, e.g. metal, metal oxide, and metal nitride, which films exhibit an atomically abrupt interface and an excellent uniformity.
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