发明授权
- 专利标题： Fabrication method of capacitor for integrated circuit
- 专利标题（中）： 集成电路电容器的制作方法
-
申请号： US09238157申请日： 1999-01-28
-
公开(公告)号： US06204111B1公开(公告)日： 2001-03-20
- 发明人: Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
- 申请人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
- 优先权： JP6-327818 19941228; JP7-194578 19950731
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
信息查询
