Invention Grant
- Patent Title: Fabrication method of capacitor for integrated circuit
- Patent Title (中): 集成电路电容器的制作方法
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Application No.: US09238157Application Date: 1999-01-28
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Publication No.: US06204111B1Publication Date: 2001-03-20
- Inventor: Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
- Applicant: Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
- Priority: JP6-327818 19941228; JP7-194578 19950731
- Main IPC: H01L218242
- IPC: H01L218242
Abstract:
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
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