发明授权
- 专利标题: Stabilized magnetic memory cell
- 专利标题(中): 稳定磁记忆体
-
申请号: US09522269申请日: 2000-03-09
-
公开(公告)号: US06205051B1公开(公告)日: 2001-03-20
- 发明人: James A. Brug , Thomas C. Anthony , Manoj K. Bhattarcharyya
- 申请人: James A. Brug , Thomas C. Anthony , Manoj K. Bhattarcharyya
- 主分类号: G11C1114
- IPC分类号: G11C1114
摘要:
A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.
信息查询