发明授权
US06207269B1 High substrate bias sputtering underlayer for longitudinal recording media
有权
用于纵向记录介质的高衬底偏压溅射底层
- 专利标题： High substrate bias sputtering underlayer for longitudinal recording media
- 专利标题（中）： 用于纵向记录介质的高衬底偏压溅射底层
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申请号： US09188331申请日： 1998-11-09
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公开(公告)号： US06207269B1公开(公告)日： 2001-03-27
- 发明人: Zhong Stella Wu , Rajiv Yadav Ranjan
- 申请人： Zhong Stella Wu , Rajiv Yadav Ranjan
- 主分类号： G11B566
- IPC分类号： G11B566
摘要：
High substrate biasing during sputter deposition of an underlayer enables the manufacture of a magnetic recording medium exhibiting increased Hr, S* and SNR. Embodiments include sputter depositing a CrMn underlayer on a NiP-plated Al substrate at a negative substrate bias greater than about 300 volts and subsequently depositing a CoCrPtTa magnetic layer.
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