- 专利标题： Formation of out-diffused bitline by laser anneal
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申请号： US09136586申请日： 1998-08-19
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公开(公告)号： US06207493B1公开(公告)日： 2001-03-27
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Thomas S. Kanarsky
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Thomas S. Kanarsky
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
The present invention provides methods of forming an out-diffused bitline in a semiconductor substrate by utilizing a laser annealing step wherein the dopant material in the trench region is out-diffused into the semiconductor substrate. The out-diffused bitline can also be formed utilizing an ion implantation step.