发明授权
US06208569B1 Method of and apparatus for sharing redundancy circuits between memory arrays within a semiconductor memory device
有权
在半导体存储器件内的存储器阵列之间共享冗余电路的方法和装置
- 专利标题: Method of and apparatus for sharing redundancy circuits between memory arrays within a semiconductor memory device
- 专利标题(中): 在半导体存储器件内的存储器阵列之间共享冗余电路的方法和装置
-
申请号: US09356805申请日: 1999-07-20
-
公开(公告)号: US06208569B1公开(公告)日: 2001-03-27
- 发明人: Vipul Patel , Daniel F. McLaughlin , Terry T. Tsai
- 申请人: Vipul Patel , Daniel F. McLaughlin , Terry T. Tsai
- 主分类号: G11C1300
- IPC分类号: G11C1300
摘要:
An apparatus for sharing redundancy circuits between memory arrays within a semiconductor memory device includes at least two main memory arrays comprised of a plurality of memory cells aligned in rows and/or columns and a shared redundancy circuit. The redundancy circuits preferably include a plurality of redundancy rows and a redundancy decoder which is configured for accessing the redundancy rows whenever a read or write operation involves use of a defective row within the main memory arrays for which a redundant row has been substituted. Preferably, each main memory array has access to the shared redundancy circuit. The shared redundancy circuit is used for substituting defective rows within a corresponding main memory array. The shared redundancy circuit provides extra redundant capacity to both of the main memory arrays.
信息查询