A resist developing method and apparatus for developing resist formed on a semiconductor wafer includes a rotating platform for supporting the wafer and a nozzle for applying developer to the resist. The nozzle is situated above the wafer and is positioned to be offset from an axis of rotation of the wafer during application of the developer to the resist. During application of the developer, the wafer is rotated at a rotational speed which allows the developer to remain on the wafer without flowing past the semiconductor edges. The developer is preferably applied for a time period less than or equal to 2 seconds.