发明授权
US06210856B1 Resist composition and process of forming a patterned resist layer on a substrate
失效
抗蚀剂组合物和在衬底上形成图案化抗蚀剂层的工艺
- 专利标题： Resist composition and process of forming a patterned resist layer on a substrate
- 专利标题（中）： 抗蚀剂组合物和在衬底上形成图案化抗蚀剂层的工艺
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申请号： US09238823申请日： 1999-01-27
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公开(公告)号： US06210856B1公开(公告)日： 2001-04-03
- 发明人: Qinghuang Lin , Timothy M. Hughes , George M. Jordhamo , Ahmad D. Katnani , Wayne M. Moreau , Niranjan Patel
- 申请人： Qinghuang Lin , Timothy M. Hughes , George M. Jordhamo , Ahmad D. Katnani , Wayne M. Moreau , Niranjan Patel
- 主分类号： G03C1725
- IPC分类号： G03C1725
摘要：
A radiation sensitive resist composition exhibiting high resolution and enhanced etch resistance comprising a silicon containing polymeric additive, a non-silicon containing base polymer, a photoacid generator and a base is provided. A method of forming a patterned resist film is also provided. A resist film having an upper surface region enriched with silicon is also disclosed.
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