发明授权
- 专利标题: Method for fabricating a metal-oxide semiconductor transistor
- 专利标题(中): 金属氧化物半导体晶体管的制造方法
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申请号: US09191202申请日: 1998-11-12
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公开(公告)号: US06211023B1公开(公告)日: 2001-04-03
- 发明人: Wen-Kuan Yeh , Jih-Wen Chou
- 申请人: Wen-Kuan Yeh , Jih-Wen Chou
- 主分类号: H01C21336
- IPC分类号: H01C21336
摘要:
A method for fabricating a metal-oxide semiconductor (MOS) transistor. A substrate having a gate structure is provided. The method of the invention includes forming a liner spacer on each side of the gate structure and a low dopant density region deep inside the substrate. The low dopant density region has a lower dopant density than that of a lightly doped region of the MOS transistor. Then a interchangeable source/drain region with a lightly doped drain (LDD) structure and an anti-punch-through region is formed on each side of the gate structure in the low dopant density region. The depth of the interchangeable source/drain region is not necessary to be shallow.