发明授权
US06211065B1 Method of depositing and amorphous fluorocarbon film using HDP-CVD
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使用HDP-CVD沉积非晶碳氟膜的方法
- 专利标题: Method of depositing and amorphous fluorocarbon film using HDP-CVD
- 专利标题(中): 使用HDP-CVD沉积非晶碳氟膜的方法
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申请号: US08948799申请日: 1997-10-10
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公开(公告)号: US06211065B1公开(公告)日: 2001-04-03
- 发明人: Ming Xi , Eugene Tzou , Lie-Yea Cheng , Turgut Sahin , Yaxin Wang
- 申请人: Ming Xi , Eugene Tzou , Lie-Yea Cheng , Turgut Sahin , Yaxin Wang
- 主分类号: C23C1622
- IPC分类号: C23C1622
摘要:
The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.
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