发明授权
- 专利标题： Method of improving metal stack reliability
- 专利标题（中）： 提高金属堆栈可靠性的方法
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申请号： US09244881申请日： 1999-02-05
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公开(公告)号： US06211075B1公开(公告)日： 2001-04-03
- 发明人: Chung-Shi Liu , Shau-Lin Shue , Chen-Hua Yu , Hung-Ju Chien
- 申请人： Chung-Shi Liu , Shau-Lin Shue , Chen-Hua Yu , Hung-Ju Chien
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A method for increasing electromigration resistance within the metal stack layer of Wolfram plugs by applying air exposure or plasma treatment to the top surface of the first layer of metal within the metal stack layer that is formed on top of metal plugs. The remainder of the process of the formation of the metal stack layer is not affected by the present invention.
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