发明授权
US06211540B1 Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor
有权
半导体应变传感器和扫描探针显微镜使用半导体应变传感器
- 专利标题： Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor
- 专利标题（中）： 半导体应变传感器和扫描探针显微镜使用半导体应变传感器
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申请号： US09173035申请日： 1998-10-15
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公开(公告)号： US06211540B1公开(公告)日： 2001-04-03
- 发明人: Hiroshi Takahashi , Nobuhiro Shimizu , Yoshiharu Shirakawabe , Susumu Ichihara , Michel Despont
- 申请人： Hiroshi Takahashi , Nobuhiro Shimizu , Yoshiharu Shirakawabe , Susumu Ichihara , Michel Despont
- 优先权： JP9-284116 19971016; JP10-280910 19981002
- 主分类号： H01L2982
- IPC分类号： H01L2982
摘要：
A semiconductor strain sensor comprises a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end. A Schottky junction is disposed on the surface portion of the semiconductor cantilever probe and is positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion. The amount of displacement of the free end of the cantilever probe is detected on the basis of a change in the electrical characteristic of the Schottky junction.