The semiconductor integrated circuit comprises a memory cell, a sense amplifier, input/output controlling circuit, a switch circuit which connects the sense amplifier and the input/output circuit, a reference timing signal generator, a timing controlling circuit having a delay element, and a switch controlling circuit which controls the switch circuit. The reference timing signal generator generates a reference timing signal necessary for read/write operations. The timing controlling circuit receives the reference timing signal and generates, by using the delay element thereof, at least one of either a read controlling signal or a write controlling signal whose timing shifts from the timing of the switch controlling signal by a predetermined amount of time. Therefore, the deviation between the timings of the switch controlling signal and the read controlling signal or the write controlling signal can easily be set to a predetermined value. The timing deviation is not easily affected by fluctuations occurring in a manufacturing process, an operation voltage, or ambient temperature. Therefore, it is possible to carry out the timing design to minimize the deviation between the timings of the switch controlling signal and the read controlling signal or the write controlling signal. As a result, a high-speed operation can be performed. When the high-speed operation is not pursued, it is possible to increase timing margins of other circuits so that the yield improves.