发明授权
- 专利标题： Photoconductive thin film, and photovoltaic device making use of the same
- 专利标题（中）： 光导薄膜和使用相同的光电器件
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申请号： US09250246申请日： 1999-02-16
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公开(公告)号： US06215061B1公开(公告)日： 2001-04-10
- 发明人: Toshimitsu Kariya
- 申请人： Toshimitsu Kariya
- 优先权： JP10-033454 19980217
- 主分类号： H01L3100
- IPC分类号： H01L3100
摘要：
A photoconductive thin film formed on a substrate and having at least hydrogen and crystal grains of silicon, which film has an Urbach energy Eu of 60 meV or below as measured by the constant photocurrent method. This film provides a photoconductive thin film free of light degradation and having superior photoconductivity, and provides a photovoltaic device having superior temperature characteristics and long-term stability.