发明授权
US06218518B1 Tetrahydrofuran-adducted group II &bgr;-diketonate complexes as source reagents for chemical vapor deposition
失效
四氢呋喃加成的II族β-二酮络合物作为化学气相沉积的原料
- 专利标题： Tetrahydrofuran-adducted group II &bgr;-diketonate complexes as source reagents for chemical vapor deposition
- 专利标题（中）： 四氢呋喃加成的II族β-二酮络合物作为化学气相沉积的原料
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申请号： US09321637申请日： 1999-05-28
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公开(公告)号： US06218518B1公开(公告)日： 2001-04-17
- 发明人: Thomas H. Baum , Witold Paw
- 申请人： Thomas H. Baum , Witold Paw
- 主分类号： C07F500
- IPC分类号： C07F500
摘要：
Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
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