发明授权
US06218817B1 Voltage-switching regulator with built-in voltage-switching module for a memory module 有权
电压开关稳压器,内置电压切换模块,用于内存模块

  • 专利标题: Voltage-switching regulator with built-in voltage-switching module for a memory module
  • 专利标题(中): 电压开关稳压器,内置电压切换模块,用于内存模块
  • 申请号: US09562678
    申请日: 2000-05-02
  • 公开(公告)号: US06218817B1
    公开(公告)日: 2001-04-17
  • 发明人: Nai-Shung Chang
  • 申请人: Nai-Shung Chang
  • 优先权: TW88211845 19990715
  • 主分类号: G05F140
  • IPC分类号: G05F140
Voltage-switching regulator with built-in voltage-switching module for a memory module
摘要:
A voltage-switching regulator with built-in voltage-switching module is provided, which is capable of supplying a terminal voltage to a memory unit operating under DDR (DRAM of Double Rate) mode. The voltage-switching regulator is implemented as a single IC chip with a built-in voltage-switching module, and is capable of generating a terminal voltage in response to an input reference voltage and transferring the terminal voltage via a transmission logic line to the memory unit operating under DDR mode. The terminal voltage is pulled up when the voltage-switching module supplies a drive current and is pulled down when the voltage-switching module supplies a sink current. This allows the memory unit to be operated under DDR mode.
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