发明授权
- 专利标题: Method of in-situ cleaning for LPCVD teos pump
- 专利标题(中): LPCVD泵泵原位清洗方法
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申请号: US09491213申请日: 2000-01-25
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公开(公告)号: US06221164B1公开(公告)日: 2001-04-24
- 发明人: Fuodoor Gologhlan , David Chi , Kent Kuohua Chang , Hector Serrato
- 申请人: Fuodoor Gologhlan , David Chi , Kent Kuohua Chang , Hector Serrato
- 主分类号: C23C1600
- IPC分类号: C23C1600
摘要:
In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition comprising at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
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