The present invention provides an anti-reflection films for lithographic application on polysilicon containing substrate. A structure for improving lithography patterning in an integrated circuit comprises a polysilicon layer, a diaphanous layer located above the polysilicon layer, an anti-reflection layer located above the diaphanous layer, and then a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern. The anti-reflection layer is preferably oxynitride.