发明授权
- 专利标题： Method of making a microelectronic structure
- 专利标题（中）： 制造微电子结构的方法
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申请号： US09234341申请日： 1999-01-20
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公开(公告)号： US06221757B1公开(公告)日： 2001-04-24
- 发明人: Sven Schmidbauer , Alexander Ruf , Florian Schnabel , Mark Hoinkis , Stefan Weber
- 申请人： Sven Schmidbauer , Alexander Ruf , Florian Schnabel , Mark Hoinkis , Stefan Weber
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A microelectronic structure is formed on a first layer or a substrate. The first layer or substrate is formed with grooves and contact openings. A metal nitride layer of TiN or WN covers the first layer or the substrate at least partially. An alpha-phase tantalum layer is deposited on top of the metal nitride layer. Finally, a metal is deposited to completely fill the grooves and the contact openings.
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