发明授权
- 专利标题： Semiconductor substrate and method for producing the same
- 专利标题（中）： 半导体衬底及其制造方法
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申请号： US09069146申请日： 1998-04-29
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公开(公告)号： US06222252B1公开(公告)日： 2001-04-24
- 发明人: Masanori Numano , Moriya Miyashita
- 申请人： Masanori Numano , Moriya Miyashita
- 优先权： JP9-112696 19970430
- 主分类号： H01L2930
- IPC分类号： H01L2930
摘要：
A semiconductor substrate is provided which can efficiently exhibit intrinsic gettering (IG) effect, is less likely to cause slipping or dislocation, and causes no significant lowering in mechanical strength. The semiconductor substrate has bulk micro defects dispersed at a density of not less than 1011 micro defects/cm3 in the interior thereof.
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