发明授权
US06222772B1 Methods of performing sector erase operations on non-volatile semiconductor memory devices
失效
在非易失性半导体存储器件上执行扇区擦除操作的方法
- 专利标题： Methods of performing sector erase operations on non-volatile semiconductor memory devices
- 专利标题（中）： 在非易失性半导体存储器件上执行扇区擦除操作的方法
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申请号： US09506997申请日： 2000-02-18
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公开(公告)号： US06222772B1公开(公告)日： 2001-04-24
- 发明人: Ki-Hwan Choi , Jong-Min Park
- 申请人： Ki-Hwan Choi , Jong-Min Park
- 优先权： KR97-74209 19971226; KR98-20001 19980530
- 主分类号： G11C1600
- IPC分类号： G11C1600
摘要：
An electrically erasable and programmable non-volatile semiconductor memory device and method of erasing the same device are provided. A fail bit counter is provided for the device and method. The fail bit counter counts erase fail bits during the sector erase operation. An erase control circuit selectively terminates the sector erase operation depending upon erase fail bit number.