发明授权
- 专利标题: Method of fabricating vacuum micro-structure
- 专利标题(中): 制造真空微结构的方法
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申请号: US09390850申请日: 1999-09-07
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公开(公告)号: US06225145B1公开(公告)日: 2001-05-01
- 发明人: Chang Auck Choi , Jong Hyun Lee , Won Ick Jang , Dae Yong Kim
- 申请人: Chang Auck Choi , Jong Hyun Lee , Won Ick Jang , Dae Yong Kim
- 优先权: KR98-36777 19980907
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
Provided is a method of fabricating a vacuum micro-structure, which is used for an element operating in a vacuum, the method comprising the steps of: (1) entirely etching an epitaxial layer of a silicon substrate having an SOI structure including an upper silicon epitaxial layer, an interlevel insulating layer and a lower silicon bulk layer to form two electrode structures and a floating vibratory structure, and encapsulating them with a vacuum sealing substrate in a vacuum; and (2) etching the silicon substrate having the SOI stricture from the back side to the interlevel insulating layer to open the electrode structures, and forming a metal electrode.
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