发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US09141450申请日: 1998-08-27
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公开(公告)号: US06226204B1公开(公告)日: 2001-05-01
- 发明人: Kazuko Inuzuka , Katsushi Nagaba , Shigeo Ohshima
- 申请人: Kazuko Inuzuka , Katsushi Nagaba , Shigeo Ohshima
- 优先权: JP9-249778 19970830
- 主分类号: G11C1604
- IPC分类号: G11C1604
摘要:
The data output circuit in a clock synchronous DRAM comprises a first data transfer circuit to which the data read from a memory is input and which transfers the input data to the output side in synchronization with an internal clock, an equalizing circuit to which the output of the first data transfer circuit is input during a read operation by a burst operation and to which high-impedance data is input after the read operation, a second data transfer circuit connected to the equalizing circuit, and an output buffer to which the output of the second data transfer circuit is input. The second data transfer circuit transfers all the data to the output buffer in synchronization with an output clock. This eliminates the dependence of the data access time and data hold time on data item and/or cycle and facilitates the timing control of the output control signal.
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