发明授权
US06226212B1 Semiconductor memory device, nonvolatile semiconductor memory device, and their data reading method
失效
半导体存储器件，非易失性半导体存储器件及其数据读取方法
- 专利标题： Semiconductor memory device, nonvolatile semiconductor memory device, and their data reading method
- 专利标题（中）： 半导体存储器件，非易失性半导体存储器件及其数据读取方法
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申请号： US09050885申请日： 1998-03-31
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公开(公告)号： US06226212B1公开(公告)日： 2001-05-01
- 发明人: Yoshinori Sakamoto , Tatsuya Ishii , Atsushi Nozoe , Hitoshi Miwa , Kazuyoshi Oshima
- 申请人： Yoshinori Sakamoto , Tatsuya Ishii , Atsushi Nozoe , Hitoshi Miwa , Kazuyoshi Oshima
- 优先权： JP9-080123 19970331
- 主分类号： G11C702
- IPC分类号： G11C702
摘要：
In order to eliminate erroneous reading of data by preventing noise which might otherwise be transmitted at the data reading time through parasitic capacitance in the data lines to other data lines, switches (Qt1 and Qt1′) are interposed between a sense amplifier (SA) for amplifying the potential of a data line (DL) and the data line, and the sense amplifier is fed with an operating voltage after the potential of the data line is transmitted to the sense amplifier, and the switch is turned off.
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