发明授权
US06227947B1 Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer
有权
在半导体晶片上化学机械研磨金属的装置和方法
- 专利标题: Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer
- 专利标题(中): 在半导体晶片上化学机械研磨金属的装置和方法
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申请号: US09366231申请日: 1999-08-03
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公开(公告)号: US06227947B1公开(公告)日: 2001-05-08
- 发明人: Tien-Chen Hu , Jih-Churng Twu , Ying-Ho Chen , Tsu Shih
- 申请人: Tien-Chen Hu , Jih-Churng Twu , Ying-Ho Chen , Tsu Shih
- 主分类号: B24B100
- IPC分类号: B24B100
摘要:
An apparatus and a method for chemical mechanical polishing a metal on a semiconductor wafer capable of achieving improved pad life are disclosed. In the apparatus, in addition to a first spray nozzle used for spraying a slurry solution onto the top of a polishing pad, a second spray nozzle is provided for mounting juxtaposed to a conditioning pad for dispensing a cleaning solution capable of dissolving polishing debris formed on the polishing pad surface. The apparatus may further include at least one cleaning solution reservoir for storing and delivering a cleaning solution to the second spray nozzle. The method can be advantageously carried out in two-steps during which a first cleaning solution is sprayed onto the pad surface for dissolving the polishing debris, and then a second cleaning solution is sprayed onto the pad surface for removing or flushing away the dissolved debris. In one illustration for the removal of oxides of copper, an acid-containing or ammonium hydroxide-containing cleaning solution is used advantageously to dissolve the oxides, and then deionized water is used to remove the dissolved debris from the pad surface.
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