发明授权
- 专利标题: Semiconductor substrate processing method
- 专利标题(中): 半导体衬底处理方法
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申请号: US09113155申请日: 1998-07-10
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公开(公告)号: US06232201B1公开(公告)日: 2001-05-15
- 发明人: Yoshiko Yoshida , Hideki Naruoka , Yasuhiro Kimura , Yasuo Yamaguchi , Toshiaki Iwamatsu , Yuuichi Hirano
- 申请人: Yoshiko Yoshida , Hideki Naruoka , Yasuhiro Kimura , Yasuo Yamaguchi , Toshiaki Iwamatsu , Yuuichi Hirano
- 优先权: JP10-004980 19980113
- 主分类号: H01L2176
- IPC分类号: H01L2176
摘要:
An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.