发明授权
US06232824B1 Semiconductor device capable of suppressing transient variation in level of internal power supply potential 有权
能够抑制内部电源电位的电平的瞬态变化的半导体装置

  • 专利标题: Semiconductor device capable of suppressing transient variation in level of internal power supply potential
  • 专利标题(中): 能够抑制内部电源电位的电平的瞬态变化的半导体装置
  • 申请号: US09440553
    申请日: 1999-11-15
  • 公开(公告)号: US06232824B1
    公开(公告)日: 2001-05-15
  • 发明人: Takashi Kono
  • 申请人: Takashi Kono
  • 优先权: JP11-133711 19990514
  • 主分类号: G05F110
  • IPC分类号: G05F110
Semiconductor device capable of suppressing transient variation in level of internal power supply potential
摘要:
First and second buffer circuits generate first and second reference potentials. A switching circuit selects a first reference potential as a reference potential while a sense operation is not performed and selects a lower second reference potential while the sense operation is performed. A buffer circuit is controlled such that a through current increases only for a predetermined time period at a initiation and a termination of the sense operation.
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