发明授权
US06236555B1 Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle 有权
使用滞后放电循环从静电卡盘快速地将半导体晶片脱扣的方法

  • 专利标题: Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
  • 专利标题(中): 使用滞后放电循环从静电卡盘快速地将半导体晶片脱扣的方法
  • 申请号: US09294255
    申请日: 1999-04-19
  • 公开(公告)号: US06236555B1
    公开(公告)日: 2001-05-22
  • 发明人: Karl F. Leeser
  • 申请人: Karl F. Leeser
  • 主分类号: H02N1300
  • IPC分类号: H02N1300
Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
摘要:
A method for rapidly dechucking a wafer from a chuck by applying a voltage that between the wafer and the electrode that performs a hysteretic discharge cycle such that residual charge is removed. The voltage is a decaying oscillating waveform that provides a decaying electric field at the wafer to chuck surface interface. The form of this field at this interface is very important to achieving rapid dechucking of less than 200 mS.
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