发明授权
US06248416B1 Highly oriented magnetic thin films, recording media, transducers, devices made therefrom and methods of making
失效
高取向磁性薄膜,记录介质,换能器,由其制成的装置和制造方法
- 专利标题: Highly oriented magnetic thin films, recording media, transducers, devices made therefrom and methods of making
- 专利标题(中): 高取向磁性薄膜,记录介质,换能器,由其制成的装置和制造方法
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申请号: US08967669申请日: 1997-11-10
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公开(公告)号: US06248416B1公开(公告)日: 2001-06-19
- 发明人: David N. Lambeth , David E. Laughlin , Wei Yang , Heng Gong , Jie Ziou
- 申请人: David N. Lambeth , David E. Laughlin , Wei Yang , Heng Gong , Jie Ziou
- 主分类号: G11B566
- IPC分类号: G11B566
摘要:
The present invention provides for magnetic and magneto-optic recording media, transducers and data storage devices constructed therefrom that have highly oriented films having long range order in the crystal structure of the film. The recording medium includes a magnetic recording layer comprised of Co-based material, such as Co or one or more Co alloys having a (10{overscore (1)}0) crystal texture, a substrate, a first underlayer having a fcc structure and a (110) crystal texture disposed between the substrate and the magnetic recording layer. A second underlayer having a bcc structure and a (112) crystal texture is also disposed between the magnetic recording layer and the first underlayer. In particular, if a (110) Si single crystal substrate is non-oxidized certain metals having fcc structures, such as Ag, Cu, Al, and Au and fcc derivative structures, such L10 and L12 structures, can be epitaxially grown on the Si surface. While the one unit cell to one unit cell lattice match between fcc Ag and A4 (diamond) Si is quite poor, multiples of the Ag unit cell distance fit very well on the Si surface. The long range order of the Si surface induces the epitaxial growth of the Ag fcc structure. Upon this fcc structure, a bcc structure, such as Cr, or a bcc derivative, such as B2, DO3 and/or L21 can be epitaxially grown.
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