发明授权
- 专利标题： Semiconductor device having a high-dielectric capacitor
- 专利标题（中）： 具有高介电电容器的半导体器件
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申请号： US09450509申请日： 1999-11-30
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公开(公告)号： US06249040B1公开(公告)日： 2001-06-19
- 发明人: Jun Lin , Masaaki Nakabayashi
- 申请人： Jun Lin , Masaaki Nakabayashi
- 优先权： JP10-341938 19981201
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.
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