发明授权
- 专利标题: Gas distribution in deposition chambers
- 专利标题(中): 沉积室中的气体分布
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申请号: US09433086申请日: 1999-11-03
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公开(公告)号: US06251187B1公开(公告)日: 2001-06-26
- 发明人: Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
- 申请人: Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
- 主分类号: C23C1600
- IPC分类号: C23C1600
摘要:
An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).
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