发明授权
- 专利标题： Apparatus and method for plasma processing
- 专利标题（中）： 等离子体处理装置及方法
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申请号： US09212411申请日： 1998-12-16
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公开(公告)号： US06251216B1公开(公告)日： 2001-06-26
- 发明人: Hideaki Okamura , Shinichi Imai , Nobuhiro Jiwari , Yoko Tohmori
- 申请人： Hideaki Okamura , Shinichi Imai , Nobuhiro Jiwari , Yoko Tohmori
- 优先权： JP9-348120 19971217
- 主分类号： H05H100
- IPC分类号： H05H100
摘要：
A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with protective members made of synthetic quartz.