A method for forming a pattern with both a logic-type and, a memory-type circuit is disclosed. The method includes first providing a wafer which includes a photoresist layer, then covering the photoresist layer with a first mask including an opaque area and a first pattern area. Forming a first pattern on the photoresist layer by a first exposure. Covering the photoresist layer with a second mask after the first mask is removed. Moreover, a second pattern is printed on the photoresist layer by a second exposure. Finally, the second mask is removed. The double-exposure method will enhance the resolution of the pattern defined on the photoresist layer.