发明授权
US06251776B1 Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers
有权
等离子体处理以减少应力腐蚀导致图案化金属层的排空
- 专利标题： Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers
- 专利标题（中）： 等离子体处理以减少应力腐蚀导致图案化金属层的排空
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申请号： US09283754申请日： 1999-04-02
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公开(公告)号： US06251776B1公开(公告)日： 2001-06-26
- 发明人: Minh Van Ngo , Simon S. Chan , Anne E. Sanderfer , King Wai Kelwin Ko
- 申请人： Minh Van Ngo , Simon S. Chan , Anne E. Sanderfer , King Wai Kelwin Ko
- 主分类号： H01L21441
- IPC分类号： H01L21441
摘要：
Stress corrosion induced voiding of patterned metal layers is avoided or substantially reduced by removing etching residues before gap filling. Embodiments include etching an Al or Al alloy layer employing fluorine and/or chlorine chemistry, wet cleaning, treating with a plasma containing ammonia or ammonia and oxygen at a temperature of at least about 400° C. and gap filling with a dielectric material, e.g. HDP oxide by HDP CVD.