发明授权
US06255026B1 Methods and devices having means for writing storing and erasing which comprise an active medium containing at least one spin-transition parent compound
有权
具有用于写入存储和擦除的装置的方法和装置包括含有至少一种自旋转移母体化合物的活性介质
- 专利标题: Methods and devices having means for writing storing and erasing which comprise an active medium containing at least one spin-transition parent compound
- 专利标题(中): 具有用于写入存储和擦除的装置的方法和装置包括含有至少一种自旋转移母体化合物的活性介质
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申请号: US09464858申请日: 1999-12-16
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公开(公告)号: US06255026B1公开(公告)日: 2001-07-03
- 发明人: Olivier Kahn , Charlotte Jay , Jonas Krober , Renée Claude , Françoise Groliere
- 申请人: Olivier Kahn , Charlotte Jay , Jonas Krober , Renée Claude , Françoise Groliere
- 优先权: FR9401224 19940203
- 主分类号: G03C556
- IPC分类号: G03C556
摘要:
A chemical composition is provided for the manufacture of devices for storing and/or displaying information, comprising a network having a molecule which is formed from a metallic element Fe(II) which is bonded to a 1-2-4 triazole ligand (H-Trz), which molecule further comprises one or more than one anions A selected from BF4−, ClO4−, CO32−, Br−, Cl−, in accordance with the formulation: FeII(H-Trz)3A2, characterized in that this composition is used in the pure state in either one of the two crystalline phases (&agr;,&bgr;) at least one of which, referred to as the second phase (&bgr;), can be thermally induced on the basis of the other phase, referred to as the first phase (&agr;), at a temperature which is equal to or higher than a first reference temperature (To), which phases each show thermally inducible spin transitions between a low-spin state at a low first temperature (T&agr;1, T&bgr;1) and a high-spin state at a high second temperature (T&agr;2, T&bgr;2), the spin transitions which are associated with each phase being accompanied by a similar abrupt change in color of the compound and taking place in accordance with hysteresis cycles at different temperatures of the two phases, wherein the hysteresis cycle (T&agr;1, T&bgr;2) associated with the first phase (&agr;) occurs at a temperature which is higher than a second reference temperature (TR), and the hysteresis cycle (T&bgr;1, T&bgr;2) associated with the second phase (&agr;) occurs at a temperature below the second reference temperature (TR), the first reference temperature (To) being higher than the second reference temperature (TR) and the highest spin-transition temperature (T&agr;2).
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