发明授权
- 专利标题: Multiple thickness of gate oxide
- 专利标题(中): 多重厚度的栅极氧化物
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申请号: US09470460申请日: 1999-12-22
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公开(公告)号: US06258673B1公开(公告)日: 2001-07-10
- 发明人: Kevin M. Houlihan , Liang-Kai Han , Dale W. Martin
- 申请人: Kevin M. Houlihan , Liang-Kai Han , Dale W. Martin
- 主分类号: H01L218234
- IPC分类号: H01L218234
摘要:
A method of forming an integrated circuit having four thicknesses of gate oxide in four sets of active areas by: oxidizing the silicon substrate to form an initial oxide having a thickness appropriate for a desired threshold voltage transistor; depositing a blocking mask to leave a first and fourth set of active areas exposed; implanting the first and fourth set of active areas with a dose of growth-altering ions, thereby making the first set of active areas more or less resistant to oxidation and simultaneously making the fourth set of active areas susceptible to accelerated oxidation; stripping the blocking mask; forming a second blocking mask to leave the first and second sets of active areas exposed; stripping the initial oxide in exposed active areas; stripping the second blocking mask; surface cleaning the wafer; and oxidizing the substrate in a second oxidation step such that a standard oxide thickness is formed in the second set of active areas, whereby an oxide thickness of more or less than the standard oxide thickness is formed in the first set of active areas, an oxide thickness of greater than the standard oxide thickness is formed in the third set of active areas, and a fourth oxide thickness greater than the third oxide thickness is formed in the fourth set of active areas.
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