- 专利标题： Method to produce high quality metal fill in deep submicron vias and lines
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申请号： US09363741申请日： 1999-07-30
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公开(公告)号： US06258717B1公开(公告)日： 2001-07-10
- 发明人: Cyprian E. Uzoh , Peter S. Locke
- 申请人： Cyprian E. Uzoh , Peter S. Locke
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80° C. to about 130° C. Metal is plated on the seedlayer.
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