Invention Grant
- Patent Title: Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus
- Patent Title (中): 热式红外感测装置,热式红外感测装置的制造方法,红外成像系统和红外成像装置
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Application No.: US09177148Application Date: 1998-10-22
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Publication No.: US06262418B1Publication Date: 2001-07-17
- Inventor: Kazuhiko Hashimoto , Masanori Okuyama , Ryuichi Kubo , Tomonori Mukaigawa
- Applicant: Kazuhiko Hashimoto , Masanori Okuyama , Ryuichi Kubo , Tomonori Mukaigawa
- Priority: JP9-293043 19971024
- Main IPC: G01J510
- IPC: G01J510

Abstract:
A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.
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