发明授权
- 专利标题： Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus
- 专利标题（中）： 热式红外感测装置，热式红外感测装置的制造方法，红外成像系统和红外成像装置
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申请号： US09177148申请日： 1998-10-22
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公开(公告)号： US06262418B1公开(公告)日： 2001-07-17
- 发明人: Kazuhiko Hashimoto , Masanori Okuyama , Ryuichi Kubo , Tomonori Mukaigawa
- 申请人： Kazuhiko Hashimoto , Masanori Okuyama , Ryuichi Kubo , Tomonori Mukaigawa
- 优先权： JP9-293043 19971024
- 主分类号： G01J510
- IPC分类号： G01J510
摘要：
A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.
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